Nanoindentation of GaAs/AlAs distributed bragg reflector grown on GaAs substrate
نویسندگان
چکیده
منابع مشابه
Distributed-bragg-reflector Lasers Grown by Chemical Beam Epitaxy
KAWACHI, M. : ‘Silica-based planar lightwave circuit technologies’. hoc. 17th European Conf. on Optical Communication, 8th Int. Conf. on Integrated Optics and Optical Fibre Communication, September 1991, pp. 51-58 YALETTE, S., RENARD, S., D E W H., IADOT, 1. P., FOURNIE& A., PHILIPPE, P., GIDON, P., GROUILLET, A. M., and DESGRANGES, D.: ‘Si-based integrated optics technologies’, Solid State Tec...
متن کاملSpectroscopic applications and frequency locking of THz photomixing with distributed-Bragg-reflector diode lasers in low-temperature-grown GaAs
A compact, narrow-linewidth, tunable source of THz radiation has been developed for spectroscopy and other high-resolution applications. Distributed-Bragg-reflector ~DBR! diode lasers at 850 nm are used to pump a low-temperature-grown GaAs photomixer. Resonant optical feedback is employed to stabilize the center frequencies and narrow the linewidths of the DBR lasers. The heterodyne linewidth f...
متن کاملGrowth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector
A Bragg reflector consisting of a 25-period MnZnSSe/ZnSSE Bragg stack is reported. The II–VI semiconductor structure was grown by molecular beam epitaxy on a GaAs ~100! epilayer. Structural characterization of the Bragg reflector was performed with double crystal x-ray diffraction and transmission electron microscopy. These studies indicated that the epitaxial II–VI structure, whose total thick...
متن کاملanalysis of three section distributed bragg reflector tunable laser diode based on the transfer matrix method
we present a detailed analysis of the static tuning characteristics of three section tunable distributed bragg reflector (dbr) laser. the analysis is based on the transfer matrix method (tmm), transmission line and scattering theory. the key feature of the analysis is the use of modified oscillation condition. with the exact oscillation condition, the static tuning characteristics such as thres...
متن کاملCharacteristic of P-type AlAs/GaAs Bragg Mirrors Grown by MBE on (100) and (311)A Oriented Substrates
P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials Science in Semiconductor Processing
سال: 2020
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2020.104912